ALCATEL THALES III-V LAB (III-V LAB)
Short description of the participating partner organization
The Role of Alcatel Thales III-V Lab, as one of the initiator of the project, will play a key role in the project. It will coordinate the WP3 on millimeter wave generation using both mode-locked and dual-mode lasers. More specifically, III-V Lab will develop quantum dot based mode-locked lasers, by combining the state of art growth technology with advanced design and fabrication capabilities. Its work on WP4 will be focused in non-linear properties of electro-absorption modulators. In WP5, III-V Lab will work on different schemes of phase locked loop to reduce phase noise of the generated mmW. As an industrial laboratory supporting two large groups, Alcatel and Thales, III-V Lab will also facilitate the exploitation of the results achieved through small scale fabrication and/or technology transfer.
Alcatel Thales III-V Lab is a new private R&D organization jointly established by Alcatel and Thales on 1st July 2004, under the French “Economic Interest Group” (GIE) status. Relying on the teams and equipment coming from “Alcatel CIT Research and Innovation” on one hand, and from “Thales Research and Technology” on the other hand, it concentrates in a single entity the most advanced industrial research skills in the field of III-V semiconductors in Europe. Its staff amounts to approximately 100 people, most of them being highly qualified recognized experts.
The purpose of Alcatel Thales III-V Lab is to perform research and development on components, from basic research to development, taking advantage of the synergies between the technologies developed for various markets addressed by Thales and Alcatel, such as telecom, space, defense and security. The streamlining of the research work performed within the Group, allows to strengthen the efforts above the critical mass and to increase the added value through the existing synergies.
Alcatel Thales III-V Lab has also the capacity to produce and sell components (epitaxial wafers, processed wafers, modules) in small quantities (typically a few tens of wafers); this is one of its main business development axis. Such capacity is particularly adapted to address in a flexible way the rapid evolution of the market, allowing partner companies (modules or systems manufacturers, including of course the mother companies Alcatel and Thales) to have an early access to the components; in a second step, depending on the market evolution, if larger quantities are required, the technology will be transferred to a partner company with larger production capacities.
The facilities of Alcatel Thales III-V Lab, located in Marcoussis and Palaiseau, include 4000 m² of clean rooms, advanced material synthesis (MOCVD, MBE), advanced device processing (RIE, ICP, CAIBE, IBE), measuring, modeling and designing equipment.
Primary Contact Person
Dr. Frederic Van Dijk
ALCATEL THALES III-V LAB
Route départementale 128
91767 Palaiseau Cedex
FR
Phone: +33 1 6941 5735
Fax: +33 1 6941 5738
E-Mail: click here
Short description of the participants (in alphabetical order)
Guang-Hua Duan is the head of the team “advanced photonic components” within Alcatel Thales III-V Lab. He received the Doctorate degree in 1991 from the Ecole Nationale Supérieure des Télécommunications (ENST). He was habilitated to direct researches by Université de Paris-Sud in 1995. From 1991 to 1992, he was a post-doctoral fellow supported by both Alcatel Alsthom Research and ENST. From 1992 to 2000, he had been an Assistant, then an Associate Professor at ENST. From 1998 to 1999, he was with the University of Maryland as a Visiting Associate Professor. He joined Opto+, Alcatel Research & Innovation Center in Marcoussis on October 2000. His present research interests include photonic crystals, advanced semiconductor lasers and functional optoelectronic sub-systems for core and metro networks. He is author or co-author of more than 130 journal and conference papers, one book chapter, and 8 patents. He lectures in the fields of electromagnetism, optoelectronics and laser physics in ENST and in Ecole Supérieure d’Optique.
Carmen Gonzalez received the “Docteur d’Etat” degree, in Physics, from the University of Grenoble in 1981. In 1983, she joined the Research Center of France Telecom (CNET) where she was engaged in research on electroluminescent flat displays, developed in the Department of Visualization. She was head of this department from 1987 to 1990. From 1991 to 1995, she worked on high-speed High-Tc superconductor devices based on the Josephson effect. From 1996, her research area concerns the optoelectronic (O/E) components for optical telecommunications. She worked on high-speed InP HBT based O/E converters for applications in Hybrid Fiber Radio (HFR) access networks and she was involved in the ACTS/FRANS European project (1996-2000). She joined the OPTOPLUS laboratory of the Alcatel CIT Research Center in 2002, for working on HBT monolithically integrated photoreceivers for applications in high-speed optical transmission networks. At present, she is participating as Project Manager in IST/ZODIAC IP project.
Frédéric van Dijk was born in Chevreuse, France, in 1972. He received the PhD degree from Université Paul Sabatier of Toulouse, France in 1999. His PhD work, performed at LAAS-CNRS, Toulouse, dealt with growth, process and characterization of AlGaAs/GaAs VCSEL structures. In 2000 he joined THALES Research an Technology, Orsay, France. He is currently working at Alcatel-Thales III-V Lab on design, fabrication and characterization of laser sources for microwave applications. He is in particular involved in studies on direct modulated DFB lasers, bipolar cascade lasers and microwave photonic systems.
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